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| Advance Product Information August 9, 2004 30 GHz 5-Bit Phase Shifter * * * * * * TGP2100-EPU Key Features and Performance Positive Control Voltage Single-Ended Logic CMOS Compatible Frequency Range: 28 - 32 GHz 0.25m pHEMT 3MI Technology Chip dimensions: 1.88 x 0.75 x 0.1 mm (0.074 x 0.030 x 0.004 inches) Preliminary Measured Performance 10 RMS Phase Shift Error (deg) 9 8 7 6 5 4 3 2 1 0 28 20 15 Phase Error (deg) 10 5 0 -5 29 30 Frequency (GHz) 31 32 RMS Phase Shift Error RMS Amplitude Error 1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 RMS Amplitude Error (dB) 0.9 28GHz 29GHz 30GHz 31GHz 32GHz -10 -15 -20 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 State Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 1 Advance Product Information August 9, 2004 TGP2100-EPU TABLE I MAXIMUM RATINGS Symbol VC ID PIN PD TCH TM TSTG 1/ 2/ 3/ Parameter Control Voltage Range Control Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value 0 - +8 V 1 mA 20 dBm 0.1 W 150 C 320 0C -65 to 150 0C 0 Notes 1/ 2/ 1/ 2/ 1/ 2/ 1/ 2/ 3/ These ratings represent the maximum operable values for this device Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70C Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 2 Advance Product Information August 9, 2004 TGP2100-EPU Preliminary Measured Data -3 -4 -5 -6 S21 (dB) -7 -8 -9 -10 -11 -12 -13 28 10 9 RMS Phase Shift Error (deg) 8 7 6 5 4 3 2 1 0 28 29 30 Frequency (GHz) 31 32 RMS Phase Shift Error RMS Amplitude Error 29 30 Frequency (GHz) 31 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 RMS Amplitude Error (dB) 3 32 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com Advance Product Information August 9, 2004 TGP2100-EPU Preliminary Measured Data 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 28 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 28 29 30 Frequency (GHz) 31 32 29 30 Frequency (GHz) 31 32 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. S22 (dB) S11 (dB) TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 4 Advance Product Information August 9, 2004 TGP2100-EPU Preliminary Measured Data 20 15 Phase Error (deg) 10 5 0 -5 28GHz 29GHz 30GHz 31GHz 32GHz -10 -15 -20 1 5 4 3 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 State 28GHz 29GHz 30GHz 31GHz 32GHz Amplitude Error (dB) 2 1 0 -1 -2 -3 -4 -5 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 State Fax: (972)994-8504 Web: www.triquint.com 5 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Advance Product Information August 9, 2004 TGP2100-EPU State Table State 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 V-Supply +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V V-11.25 0V +5V 0V +5V 0V +5V 0V +5V 0V +5V 0V +5V 0V +5V 0V +5V 0V +5V 0V +5V 0V +5V 0V +5V 0V +5V 0V +5V 0V +5V 0V +5V V-22.5 0V 0V +5V +5V 0V 0V +5V +5V 0V 0V +5V +5V 0V 0V +5V +5V 0V 0V +5V +5V 0V 0V +5V +5V 0V 0V +5V +5V 0V 0V +5V +5V V-45 0V 0V 0V 0V +5V +5V +5V +5V 0V 0V 0V 0V +5V +5V +5V +5V 0V 0V 0V 0V +5V +5V +5V +5V 0V 0V 0V 0V +5V +5V +5V +5V V-90 0V 0V 0V 0V 0V 0V 0V 0V +5V +5V +5V +5V +5V +5V +5V +5V 0V 0V 0V 0V 0V 0V 0V 0V +5V +5V +5V +5V +5V +5V +5V +5V V-180 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V +5V Phase Shift Reference 11.25 22.5 33.75 45 56.25 67.5 78.75 90 101.25 112.5 123.75 135 146.25 157.5 168.75 180 191.25 202.5 213.75 225 236.25 247.5 258.75 270 281.25 292.5 303.75 315 326.25 337.5 348.75 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 6 Advance Product Information August 9, 2004 TGP2100-EPU Mechanical Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 7 Advance Product Information August 9, 2004 TGP2100-EPU Chip Assembly & Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 8 Advance Product Information August 9, 2004 TGP2100-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 9 |
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